GA10JT12-263

Picha ni ya kumbukumbu, tafadhali wasiliana nasi ili kupata picha halisi

Sehemu ya Mtengenezaji	GA10JT12-263
Mtengenezaji	GeneSiC Semiconductor
Maelezo	TRANS SJT 1200V 25A
Kategoria	bidhaa za semiconductor tofauti
Familia	transistors - fets, mosfets - moja
Mzunguko wa maisha:	New from this manufacturer.
Uwasilishaji:	DHL FedEx Ups TNT EMS
Malipo	T/T Paypal Visa MoneyGram Western Union
Karatasi ya data	GA10JT12-263 PDF

Upatikanaji

Instock	170
UnitPrice	$ 20.74000

GA10JT12-263 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

GA10JT12-263 Vipimo

Aina	Maelezo
mfululizo:	-
kifurushi:	Tube
hali ya sehemu:	Active
aina ya fet:	-
teknolojia:	SiC (Silicon Carbide Junction Transistor)
futa kwa voltage ya chanzo (vdss):	1200 V
mkondo - unyevu unaoendelea (id) @ 25°c:	25A (Tc)
voltage ya kuendesha (kiwasha cha juu cha rds, dakika rds imewashwa):	-
rds kwenye (max) @ id, vgs:	120mOhm @ 10A
vgs(th) (max) @ kitambulisho:	-
malipo ya lango (qg) (max) @ vgs:	-
vgs (kiwango cha juu):	-
uwezo wa kuingiza (ciss) (max) @ vds:	1403 pF @ 800 V
kipengele cha fet:	-
upotezaji wa nguvu (max):	170W (Tc)
joto la uendeshaji:	175°C (TJ)
aina ya ufungaji:	Surface Mount
kifurushi cha kifaa cha wasambazaji:	-
kifurushi / kesi:	-

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