RN2610(TE85L,F)

RN2610(TE85L,F)

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Sehemu ya Mtengenezaji RN2610(TE85L,F)
Mtengenezaji Toshiba Electronic Devices and Storage Corporation
Maelezo TRANS 2PNP PREBIAS 0.3W SM6
Kategoria bidhaa za semiconductor tofauti
Familia transistors - bipolar (bjt) - safu, kabla ya upendeleo
Mzunguko wa maisha: New from this manufacturer.
Uwasilishaji: DHL FedEx Ups TNT EMS
Malipo T/T Paypal Visa MoneyGram Western Union
Karatasi ya data RN2610(TE85L,F) PDF

Upatikanaji

Instock 2,945
UnitPrice $ 0.48000

RN2610(TE85L,F) Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

RN2610(TE85L,F) Vipimo

Aina Maelezo
mfululizo:-
kifurushi:Tape & Reel (TR)Cut Tape (CT)
hali ya sehemu:Active
aina ya transistor:2 PNP - Pre-Biased (Dual)
sasa - mtoza (ic) (max):100mA
mgawanyiko wa mtozaji wa mtozaji wa voltage (max):50V
upinzani - msingi (r1):4.7kOhms
upinzani - msingi wa emitter (r2):-
dc current gain (hfe) (min) @ ic, vce:120 @ 1mA, 5V
vce kueneza (max) @ ib, ic:300mV @ 250µA, 5mA
sasa - kata ya mtoza (max):100nA (ICBO)
mzunguko - mpito:200MHz
nguvu - max:300mW
aina ya ufungaji:Surface Mount
kifurushi / kesi:SC-74, SOT-457
kifurushi cha kifaa cha wasambazaji:SM6

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Shipping Rate

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