IMW120R030M1HXKSA1

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Sehemu ya Mtengenezaji	IMW120R030M1HXKSA1
Mtengenezaji	IR (Infineon Technologies)
Maelezo	SICFET N-CH 1.2KV 56A TO247-3
Kategoria	bidhaa za semiconductor tofauti
Familia	transistors - fets, mosfets - moja
Mzunguko wa maisha:	New from this manufacturer.
Uwasilishaji:	DHL FedEx Ups TNT EMS
Malipo	T/T Paypal Visa MoneyGram Western Union
Karatasi ya data	IMW120R030M1HXKSA1 PDF

Upatikanaji

Instock	668
UnitPrice	$ 22.83000

IMW120R030M1HXKSA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IMW120R030M1HXKSA1 Vipimo

Aina	Maelezo
mfululizo:	CoolSiC™
kifurushi:	Tube
hali ya sehemu:	Active
aina ya fet:	N-Channel
teknolojia:	SiCFET (Silicon Carbide)
futa kwa voltage ya chanzo (vdss):	1.2 kV
mkondo - unyevu unaoendelea (id) @ 25°c:	56A (Tc)
voltage ya kuendesha (kiwasha cha juu cha rds, dakika rds imewashwa):	15V, 18V
rds kwenye (max) @ id, vgs:	40mOhm @ 25A, 18V
vgs(th) (max) @ kitambulisho:	5.7V @ 10mA
malipo ya lango (qg) (max) @ vgs:	63 nC @ 18 V
vgs (kiwango cha juu):	+23V, -7V
uwezo wa kuingiza (ciss) (max) @ vds:	2.12 nF @ 800 V
kipengele cha fet:	-
upotezaji wa nguvu (max):	227W (Tc)
joto la uendeshaji:	-55°C ~ 175°C (TJ)
aina ya ufungaji:	Through Hole
kifurushi cha kifaa cha wasambazaji:	PG-TO247-3-41
kifurushi / kesi:	TO-247-3

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.